Infineon Technologies AG FET, MOSFET Arrays IRF8852TRPBF

Mosfet Array 2 N-Channel (Dual) 25V 7.8A 1W Surface Mount 8-TSSOP

Manufacturer: Infineon Technologies
Win Source Part Number: 1046765-IRF8852TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 7.8A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 9.5nC @ 4.5V
Max Input Capacitance: 1151pF @ 20V
Maximum Rds On at Id,Vgs: 11.3 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

MOSFET 2N-CH 25V 7.8A 8TSSOP Product overview: IRF8852TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 7.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF8852TRPBF can be used for catalog matching and distributor lookup.