Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8736PBF IRF8736PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205323-IRF8736PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF8736 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 2.35V @ 50μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 2315pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FDS8672S; AO4588; FDS6688-NF40; STS17NF3LL; Introduction Date: August 01, 2007 ECCN: EAR99 Country of Origin: Austria, China, Malaysia, Philippines, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205323-IRF8736PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF8736 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 2.35V @ 50μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 2315pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FDS8672S; AO4588; FDS6688-NF40; STS17NF3LL; Introduction Date: August 01, 2007 ECCN: EAR99 Country of Origin: Austria, China, Malaysia, Philippines, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8736PBF
205323-IRF8736PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8736PBF 205323-IRF8736PBF
Manufacturer: Infineon Technologies Win Source Part Number: 205323-IRF8736PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: IRF8736 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 2.35V @ 50μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 2315pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): FDS8672S; AO4588; FDS6688-NF40; STS17NF3LL; Introduction Date: August 01, 2007 ECCN: EAR99 Country of Origin: Austria, China, Malaysia, Philippines, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205323-IRF8736PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF8736
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 26nC @ 4.5V
Max Input Capacitance: 2315pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): FDS8672S; AO4588; FDS6688-NF40; STS17NF3LL;
Introduction Date: August 01, 2007
ECCN: EAR99
Country of Origin: Austria, China, Malaysia, Philippines, Thailand
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
30V 18A MOSFET Transistor - 278-IRF8736PBF - ERSAELECTRONICS PTE. LTD.
Singapore
30V 18A MOSFET Transistor
278-IRF8736PBF
30V 18A MOSFET Transistor 278-IRF8736PBF
MOSFET N-CH 30V 18A 8SO Product overview: IRF8736PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8736PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 18A 8SO Product overview: IRF8736PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8736PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF8736PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8736PBF-ND
Single FETs, MOSFETs IRF8736PBF-ND
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8736PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8736PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8736PBF
MOSFET N-CH 30V 18A 8SO

MOSFET N-CH 30V 18A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 205323-IRF8736PBF 278-IRF8736PBF IRF8736PBF-ND IRF8736PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8736PBF 30V 18A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts 2500 milliwatts
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