Infineon Technologies AG Single FETs, MOSFETs IRF8707GPBF

Description
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
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Description
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF8707GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8707GPBF-ND
Single FETs, MOSFETs IRF8707GPBF-ND
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8707GPBF - 069420-IRF8707GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8707GPBF
069420-IRF8707GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8707GPBF 069420-IRF8707GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069420-IRF8707GPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 9.3nC @ 4.5V Max Input Capacitance: 760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 069420-IRF8707GPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 9.3nC @ 4.5V
Max Input Capacitance: 760pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8707GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8707GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8707GPBF
MOSFET N-CH 30V 11A 8SO

MOSFET N-CH 30V 11A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF8707GPBF-ND 069420-IRF8707GPBF IRF8707GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8707GPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 760 pF @ 15 V
V(BR)DSS 30 volts
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