Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8513PBF IRF8513PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 069419-IRF8513PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.5W, 2.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A, 11A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 8.6nC @ 4.5V
Max Input Capacitance: 766pF @ 15V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 30V 8A/11A 8SO Product overview: IRF8513PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, 11A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF8513PBF can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 8A, 11A 1.5W, 2.4W Surface Mount 8-SO