Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 Product overview: IRF8327STRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14A, 30V, 0.0073ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14A, 30V, 0.0073ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8327STRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069415-IRF8327STRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SQ
Dimension: DirectFET Isometric SQ
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1430pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 14A (Ta), 60A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
Integrated Circuits (ICs) - Transistors - MOSFETs
MOSFET N-CH 30V 14A DIRECTFET
MOSFET 30V N-Channel HEXFET Power MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF8327STRPBF | 069415-IRF8327STRPBF | IRF8327STRPBF-ND | IRF8327STRPBF | IRF8327STRPBF | IRF8327STRPBF |
| Product Name | N-Channel 14A 30V 0.0073ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8327STRPBF | Single FETs, MOSFETs | Integrated Circuits (ICs) - Transistors - MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 2200 milliwatts | 2200 to 42000 milliwatts | 2200 milliwatts | |||
| TJ | -40 C (-40 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| V(BR)DSS | 30 volts | 30 volts |
