MOSFET 2N-CH 30V 9.7A 8SO Product overview: IRF8313TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF8313TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO
30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SO-8 MOSFETs ROHS
MOSFET 2N-CH 30V 9.7A 8SO
Dual MOSFET, Dual N Channel, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V RoHS Compliant: Yes
MOSFET 2N-CH 30V 9.7A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF8313TRPBF | IRF8313TRPBFDKR-ND | IRF8313TRPBF | IRF8313TRPBF | IRF8313TRPBF | 42Y0424 | IRF8313TRPBF |
| Product Name | 30V 9.7A MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | FET, MOSFET Arrays | Dual Mosfet, Dual N Channel, 9.7 A, 30 V, 0.0125 Ohm, 10 V, 1.8 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 2 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
