Infineon Technologies AG 30V 9.7A MOSFET Transistor IRF8313PBF

MOSFET 2N-CH 30V 9.7A 8SO Product overview: IRF8313PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF8313PBF can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 069413-IRF8313PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.7A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 90nC @ 4.5V
Max Input Capacitance: 760pF @ 15V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 9.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited