Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8306MTRPBF IRF8306MTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205320-IRF8306MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 140A (Tc) Gate-Source Threshold Voltage: 2.35V @ 100μA Max Gate Charge: 38nC @ 4.5V Max Input Capacitance: 4110pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205320-IRF8306MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 140A (Tc) Gate-Source Threshold Voltage: 2.35V @ 100μA Max Gate Charge: 38nC @ 4.5V Max Input Capacitance: 4110pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8306MTRPBF - 205320-IRF8306MTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8306MTRPBF
205320-IRF8306MTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8306MTRPBF 205320-IRF8306MTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205320-IRF8306MTRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: DIRECTFET MX Dimension: DirectFET Isometric MX Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 140A (Tc) Gate-Source Threshold Voltage: 2.35V @ 100μA Max Gate Charge: 38nC @ 4.5V Max Input Capacitance: 4110pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205320-IRF8306MTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MX
Dimension: DirectFET Isometric MX
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 140A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 100μA
Max Gate Charge: 38nC @ 4.5V
Max Input Capacitance: 4110pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 23A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF8306MTRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8306MTRPBF-ND
Single FETs, MOSFETs IRF8306MTRPBF-ND
N-Channel 30V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 30V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
Singapore
30V 23A MOSFET Transistor
278-IRF8306MTRPBF
30V 23A MOSFET Transistor 278-IRF8306MTRPBF
MOSFET N-CH 30V 23A DIRECTFET Product overview: IRF8306MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8306MTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 23A DIRECTFET Product overview: IRF8306MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8306MTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8306MTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8306MTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8306MTRPBF
MOSFET N-CH 30V 23A DIRECTFET

MOSFET N-CH 30V 23A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205320-IRF8306MTRPBF IRF8306MTRPBF-ND 278-IRF8306MTRPBF IRF8306MTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8306MTRPBF Single FETs, MOSFETs 30V 23A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2100 to 75000 milliwatts 2100 milliwatts
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