Infineon Technologies AG Single FETs, MOSFETs IRF8113TRPBF

Description
MOSFET N-CH 30V 17.2A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 30V 17.2A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF8113TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF8113TRPBF
Single FETs, MOSFETs IRF8113TRPBF
MOSFET N-CH 30V 17.2A 8SO

MOSFET N-CH 30V 17.2A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF - 017537-IRF8113TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF
017537-IRF8113TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF 017537-IRF8113TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017537-IRF8113TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 36nC @ 4.5V Max Input Capacitance: 2910pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V Alternative Parts (Cross-Reference): FDS6064N3; IRF8113PbF; IRF8113TRPBF; IRF8113; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 017537-IRF8113TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Max Input Capacitance: 2910pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V
Alternative Parts (Cross-Reference): FDS6064N3; IRF8113PbF; IRF8113TRPBF; IRF8113;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFCT-ND
Single FETs, MOSFETs IRF8113PBFCT-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFTR-ND
Single FETs, MOSFETs IRF8113PBFTR-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFDKR-ND
Single FETs, MOSFETs IRF8113PBFDKR-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Mosfet Ic; Channel Type Infineon - 31K2303 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Ic; Channel Type Infineon
31K2303
Mosfet Ic; Channel Type Infineon 31K2303
MOSFET IC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:-; Power Dissipation:- RoHS Compliant: Yes

MOSFET IC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:-; Power Dissipation:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8113TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8113TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8113TRPBF
MOSFET N-CH 30V 17.2A 8SO

MOSFET N-CH 30V 17.2A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 30V 16.6A 6mOhm 24nC

MOSFET MOSFT 30V 16.6A 6mOhm 24nC

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF8113TRPBF 017537-IRF8113TRPBF IRF8113PBFCT-ND 31K2303 IRF8113TRPBF IRF8113TRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF Single FETs, MOSFETs Mosfet Ic; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 17200 milliamps 17200 milliamps
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