Infineon Technologies AG Single FETs, MOSFETs IRF8113TRPBF

Description
MOSFET N-CH 30V 17.2A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 30V 17.2A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF8113TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF8113TRPBF
Single FETs, MOSFETs IRF8113TRPBF
MOSFET N-CH 30V 17.2A 8SO

MOSFET N-CH 30V 17.2A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF - 017537-IRF8113TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF
017537-IRF8113TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF 017537-IRF8113TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017537-IRF8113TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 36nC @ 4.5V Max Input Capacitance: 2910pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V Alternative Parts (Cross-Reference): FDS6064N3; IRF8113PbF; IRF8113TRPBF; IRF8113; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 017537-IRF8113TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Max Input Capacitance: 2910pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 17.2A, 10V
Alternative Parts (Cross-Reference): FDS6064N3; IRF8113PbF; IRF8113TRPBF; IRF8113;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFCT-ND
Single FETs, MOSFETs IRF8113PBFCT-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFTR-ND
Single FETs, MOSFETs IRF8113PBFTR-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - IRF8113PBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113PBFDKR-ND
Single FETs, MOSFETs IRF8113PBFDKR-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 30V 16.6A 6mOhm 24nC

MOSFET MOSFT 30V 16.6A 6mOhm 24nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8113TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8113TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8113TRPBF
MOSFET N-CH 30V 17.2A 8SO

MOSFET N-CH 30V 17.2A 8SO

Supplier's Site
Mosfet Ic; Channel Type Infineon - 31K2303 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Ic; Channel Type Infineon
31K2303
Mosfet Ic; Channel Type Infineon 31K2303
MOSFET IC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:-; Power Dissipation:- RoHS Compliant: Yes

MOSFET IC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:-; Power Dissipation:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF8113TRPBF 017537-IRF8113TRPBF IRF8113PBFCT-ND IRF8113TRPBF IRF8113TRPBF 31K2303
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8113TRPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Ic; Channel Type Infineon
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 17200 milliamps 17200 milliamps
Unlock Full Specs
to access all available technical data