Infineon Technologies AG Single FETs, MOSFETs IRF8113TR

Description
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF8113TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8113TR-ND
Single FETs, MOSFETs IRF8113TR-ND
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
FETs - Single - IRF8113TR - 710507-IRF8113TR - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF8113TR
710507-IRF8113TR
FETs - Single - IRF8113TR 710507-IRF8113TR
Manufacturer: Infineon Technologies Win Source Part Number: 710507-IRF8113TR Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 17.2A Rds On (Maximum) at Id, Vgs: 5.6mOhm at 17.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 36nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2910pF at 15V

Manufacturer: Infineon Technologies
Win Source Part Number: 710507-IRF8113TR
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 17.2A
Rds On (Maximum) at Id, Vgs: 5.6mOhm at 17.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2910pF at 15V

Buy Now
30V 17.2A MOSFET Transistor - 278-IRF8113TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
30V 17.2A MOSFET Transistor
278-IRF8113TR
30V 17.2A MOSFET Transistor 278-IRF8113TR
MOSFET N-CH 30V 17.2A 8SO Product overview: IRF8113TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8113TR can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 17.2A 8SO Product overview: IRF8113TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8113TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8113TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8113TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8113TR
MOSFET N-CH 30V 17.2A 8SO

MOSFET N-CH 30V 17.2A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF8113TR-ND 710507-IRF8113TR 278-IRF8113TR IRF8113TR
Product Name Single FETs, MOSFETs FETs - Single - IRF8113TR 30V 17.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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