MOSFET N-CH 100V 80A D2PAK Product overview: IRF8010SPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8010SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 121074-IRF8010SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 3830pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 100V 80A (Tc) 260W (Tc) Surface Mount D2PAK
MOSFET N-CH 100V 80A D2PAK
N CHANNEL MOSFET, 100V, 80A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:80A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 278-IRF8010SPBF | 121074-IRF8010SPBF | IRF8010SPBF-ND | IRF8010SPBF | 17308561 |
| Product Name | 100V 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010SPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| PD | 260000 milliwatts | 260000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tube | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
