Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF IRF8010PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 040702-IRF8010PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Family Name: IRF8010 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3830pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 45A, 10V Alternative Parts (Cross-Reference): BUK7528-100A; BUK7528-100A,127; BUK9529-100B; Introduction Date: July 06, 2004 ECCN: EAR99 Country of Origin: China, Philippines, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF - 040702-IRF8010PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF8010PBF-ND - DigiKey
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    RS Components, Ltd.
  • Transistor - 66771162 - Radwell International
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  • Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant Infineon - 38K2853 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - IRF8010PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF8010PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg - 70017008 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8010PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 040702-IRF8010PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Family Name: IRF8010 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3830pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 45A, 10V Alternative Parts (Cross-Reference): BUK7528-100A; BUK7528-100A,127; BUK9529-100B; Introduction Date: July 06, 2004 ECCN: EAR99 Country of Origin: China, Philippines, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF - 040702-IRF8010PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF
040702-IRF8010PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF 040702-IRF8010PBF
Manufacturer: Infineon Technologies Win Source Part Number: 040702-IRF8010PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 260W (Tc) Family Name: IRF8010 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3830pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 45A, 10V Alternative Parts (Cross-Reference): BUK7528-100A; BUK7528-100A,127; BUK9529-100B; Introduction Date: July 06, 2004 ECCN: EAR99 Country of Origin: China, Philippines, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 040702-IRF8010PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 260W (Tc)
Family Name: IRF8010
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 3830pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 45A, 10V
Alternative Parts (Cross-Reference): BUK7528-100A; BUK7528-100A,127; BUK9529-100B;
Introduction Date: July 06, 2004
ECCN: EAR99
Country of Origin: China, Philippines, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 80A MOSFET Transistor
278-IRF8010PBF
100V 80A MOSFET Transistor 278-IRF8010PBF
MOSFET N-CH 100V 80A TO220AB Product overview: IRF8010PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8010PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 80A TO220AB Product overview: IRF8010PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF8010PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF8010PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF8010PBF-ND
Single FETs, MOSFETs IRF8010PBF-ND
N-Channel 100V 80A (Tc) 260W (Tc) Through Hole TO-220AB

N-Channel 100V 80A (Tc) 260W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 2579326 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579326
MOSFETs 2579326
Infineon MOSFET IRF8010PBF

Infineon MOSFET IRF8010PBF

Supplier's Site
MOSFETs - 2579326P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579326P
MOSFETs 2579326P
Infineon MOSFET IRF8010PBF

Infineon MOSFET IRF8010PBF

Supplier's Site
MOSFETs - 2579325 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579325
MOSFETs 2579325
Infineon MOSFET IRF8010PBF

Infineon MOSFET IRF8010PBF

Supplier's Site
Transistor - 66771162 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66771162
Transistor 66771162
POWER FIELD-EFFECT TRANSISTOR, 75A, 100V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 75A, 100V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant Infineon - 38K2853 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant Infineon
38K2853
Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant Infineon 38K2853
MOSFET Transistor, N Channel, 80 A, 100 V, 15 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 80 A, 100 V, 15 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF8010PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF8010PBF
100V 80A 15mΩ@10V,45A 260W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS

100V 80A 15mΩ@10V,45A 260W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF8010PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF8010PBF
Single FETs, MOSFETs IRF8010PBF
MOSFET N-CH 100V 80A TO220AB

MOSFET N-CH 100V 80A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF8010PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF8010PBF
Single FETs, MOSFETs IRF8010PBF
IRF8010 - 12V-300V N-CHANNEL POW

IRF8010 - 12V-300V N-CHANNEL POW

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg - 70017008 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
70017008
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg 70017008
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF8010PBF
MOSFET IRF8010PBF
MOSFET MOSFT 100V 80A 15mOhm 81nC

MOSFET MOSFT 100V 80A 15mOhm 81nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8010PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8010PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8010PBF
MOSFET N-CH 100V 80A TO220AB

MOSFET N-CH 100V 80A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. Radwell International Newark, An Avnet Company LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) Allied Electronics, Inc. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 040702-IRF8010PBF 278-IRF8010PBF IRF8010PBF-ND 2579326 66771162 38K2853 IRF8010PBF IRF8010PBF 70017008 IRF8010PBF IRF8010PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8010PBF 100V 80A MOSFET Transistor Single FETs, MOSFETs MOSFETs Transistor Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant Infineon Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts 100 volts 100 volts
PD 260000 milliwatts 260 milliwatts 260000 milliwatts 260000 milliwatts 260000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220 TO-3 TO-220 TO-220; TO-220-3 TO-220 TO-220; TO-220-3
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