MOSFET 2N-CH 30V 9.1A/11A 8SO Product overview: IRF7907TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.1A, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.1A, 11A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7907TRPBF can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 9.1A/11A 8SO
Mosfet Array 2 N-Channel (Dual) 30V 9.1A, 11A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 9.1A, 11A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 9.1A, 11A 2W Surface Mount 8-SO
MOSFET HEXFET Dual N-Ch 30V 9A/11A SOIC8
MOSFET HEXFET Dual N-Ch 30V 9A/11A SOIC8
MOSFET HEXFET Dual N-Ch 30V 9A/11A SOIC8
Manufacturer: Infineon Technologies
Win Source Part Number: 1046744-IRF7907TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF7907
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.1A, 11A
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 850pF @ 15V
Maximum Rds On at Id,Vgs: 16.4 mOhm @ 9.1A, 10V
Alternative Parts (Cross-Reference): UPA2750GR-E1-A; TPC8210(TE12L); FDS6910-NF40; Upa2750gr;
Introduction Date: January 04, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
MOSFET 2N-CH 30V 9.1A/11A 8SO
MOSFET, N-CH, 30V, 11A, 150DEG C, 2W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(on):0.0098ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRF7907TRPBF | IRF7907TRPBF | IRF7907TRPBFDKR-ND | 1300964P | 1300964 | 1046744-IRF7907TRPBF | 376-IRF7907TRPBF | IRF7907TRPBF | 13AC9211 |
| Product Name | 30V 9.1A 11A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7907TRPBF | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 11A, 150Deg C, 2W; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0190 to 0.0240 kS | ||||||||
| PD | 2 milliwatts | 2000 milliwatts | 2000 milliwatts |
