MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
MOSFET 2N-CH 30V 7.6A/11A 8SO Product overview: IRF7904TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.6A, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.6A, 11A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7904TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Half Bridge) 30V 7.6A, 11A 1.4W, 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Half Bridge) 30V 7.6A, 11A 1.4W, 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Half Bridge) 30V 7.6A, 11A 1.4W, 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001969-IRF7904TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.4W, 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.6A, 11A
Gate-Source Threshold Voltage: 2.25V @ 25μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 910pF @ 15V
Maximum Rds On at Id,Vgs: 16.2 mOhm @ 7.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 7.6A/11A 8SO
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.25V; PowerRoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7904TRPBF | 289-IRF7904TRPBF | IRF7904TRPBFDKR-ND | 001969-IRF7904TRPBF | IRF7904TRPBF | 13AC9210 | IRF7904TRPBF |
| Product Name | FET, MOSFET Arrays | 30V 7.6A 11A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7904TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Ch, 30V, 11A, Soic-8; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 7600 milliamps | 11000 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
