Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7902TRPBF IRF7902TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 001968-IRF7902TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.4W, 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A, 9.7A
Gate-Source Threshold Voltage: 2.25V @ 25μA
Max Gate Charge: 6.9nC @ 4.5V
Max Input Capacitance: 580pF @ 15V
Maximum Rds On at Id,Vgs: 22.6 mOhm @ 6.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics

MOSFET 2N-CH 30V 6.4A/9.7A 8SO Product overview: IRF7902TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.4A, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.4A, 9.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7902TRPBF can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 6.4A, 9.7A 1.4W, 2W Surface Mount 8-SO