Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7901D1TRPBF IRF7901D1TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 001967-IRF7901D1TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.2A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 10.5nC @ 5V
Max Input Capacitance: 780pF @ 16V
Maximum Rds On at Id,Vgs: 38 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 4k pcs

Mosfet Array 2 N-Channel (Dual) 30V 6.2A 2W Surface Mount 8-SO

MOSFET 2N-CH 30V 6.2A 8SO Product overview: IRF7901D1TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7901D1TRPBF can be used for catalog matching and distributor lookup.