Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7862PBF IRF7862PBF

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 962716-IRF7862PBF Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 1 Input Capacitance: 4.09 nF Power Dissipation: 2.5 W Height: 1.5 mm Resistance: 3.3 MΩ Number of Pins: 8 Width: 4 mm Rise Time: 19 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 16 ns Max Junction Temperature (Tj): 150 °C Package Quantity: 3800 Continuous Drain Current (ID): 21 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Recovery Time: 26 ns Drain to Source Resistance: 4.5 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.7 mΩ Nominal Vgs: 2.35 V Threshold Voltage: 5.4 V On-State Resistance: 3.3 mΩ
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 962716-IRF7862PBF Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 1 Input Capacitance: 4.09 nF Power Dissipation: 2.5 W Height: 1.5 mm Resistance: 3.3 MΩ Number of Pins: 8 Width: 4 mm Rise Time: 19 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 16 ns Max Junction Temperature (Tj): 150 °C Package Quantity: 3800 Continuous Drain Current (ID): 21 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Recovery Time: 26 ns Drain to Source Resistance: 4.5 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.7 mΩ Nominal Vgs: 2.35 V Threshold Voltage: 5.4 V On-State Resistance: 3.3 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7862PBF - 962716-IRF7862PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7862PBF
962716-IRF7862PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7862PBF 962716-IRF7862PBF
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 962716-IRF7862PBF Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 1 Input Capacitance: 4.09 nF Power Dissipation: 2.5 W Height: 1.5 mm Resistance: 3.3 MΩ Number of Pins: 8 Width: 4 mm Rise Time: 19 ns Fall Time: 11 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 16 ns Max Junction Temperature (Tj): 150 °C Package Quantity: 3800 Continuous Drain Current (ID): 21 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 18 ns Recovery Time: 26 ns Drain to Source Resistance: 4.5 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.7 mΩ Nominal Vgs: 2.35 V Threshold Voltage: 5.4 V On-State Resistance: 3.3 mΩ

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 962716-IRF7862PBF
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Number of Elements: 1
Input Capacitance: 4.09 nF
Power Dissipation: 2.5 W
Height: 1.5 mm
Resistance: 3.3 MΩ
Number of Pins: 8
Width: 4 mm
Rise Time: 19 ns
Fall Time: 11 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 16 ns
Max Junction Temperature (Tj): 150 °C
Package Quantity: 3800
Continuous Drain Current (ID): 21 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 18 ns
Recovery Time: 26 ns
Drain to Source Resistance: 4.5 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 3.7 mΩ
Nominal Vgs: 2.35 V
Threshold Voltage: 5.4 V
On-State Resistance: 3.3 mΩ

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Singapore, Singapore
30V 21A 2.5W MOSFET Transistor
285-IRF7862PBF
30V 21A 2.5W MOSFET Transistor 285-IRF7862PBF
Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.7MILLIOHMS; Id 21A; SO-8; Pd 2.5W; Vgs +/-20V Product overview: IRF7862PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7862PBF can be used for catalog matching and distributor lookup.

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.7MILLIOHMS; Id 21A; SO-8; Pd 2.5W; Vgs +/-20V Product overview: IRF7862PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7862PBF can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 962716-IRF7862PBF 285-IRF7862PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7862PBF 30V 21A 2.5W MOSFET Transistor
V(BR)DSS 30 volts
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