MOSFET N-CH 60V 12A 8SO
MOSFET N-CH 60V 12A 8SO Product overview: IRF7855TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7855TRPBF can be used for catalog matching and distributor lookup.
N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001964-IRF7855TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF7855
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1560pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): TSM120N06LCS RLG; TSM120NA06LCS RLG; TPC8049-H;
Introduction Date: May 17, 2006
ECCN: EAR99
Country of Origin: China, Thailand
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 60V, 12A, 150DEG C, 2.5W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V RoHS Compliant: Yes
MOSFET N-CH 60V 12A 8SO
MOSFET MOSFT 60V 12A 9.4mOhm 26nC Qg
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7855TRPBF | 8273893P | 8273893 | 278-IRF7855TRPBF | IRF7855TRPBFTR-ND | 001964-IRF7855TRPBF | 13AC3532 | IRF7855TRPBF | IRF7855TRPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7855TRPBF | Mosfet, N-Ch, 60V, 12A, 150Deg C, 2.5W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 12000 milliamps | 12000 milliamps | |||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts |
