Infineon Technologies AG 60V 12A MOSFET Transistor IRF7855PBF

MOSFET N-CH 60V 12A 8SO Product overview: IRF7855PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7855PBF can be used for catalog matching and distributor lookup.

N-Channel 60V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 777033-IRF7855PBF
Series: HEXFET
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Family Name: IRF7855
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4.9V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.5W (Ta)
Rds On (Maximum) @ Id, Vgs: 9.4 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): FDS5672; SI4470EY-E3; Si4470EY; SI4470EY-T1-GE3;
Introduction Date: May 17, 2006
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited