The IRF7853TRPBF is a high-performance N-channel MOSFET designed for efficient power management applications, particularly in DC-DC converters. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 8.3A at 25¬8C. The device has a low on-resistance of 18 mOc at 10V gate drive, which minimizes conduction losses. The maximum gate charge is specified at 39nC, allowing for efficient switching performance. The operating temperature range extends from -55¬8C to 150¬8C, making it suitable for a variety of environments. The IRF7853TRPBF is packaged in an 8-SOIC format, compatible with surface mount technology, and is RoHS compliant. This part is actively used in applications requiring reliable and efficient power conversion.
MOSFET N-CH 100V 8.3A 8SO Product overview: IRF7853TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7853TRPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001962-IRF7853TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.3A (Ta)
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 8.3A, 100V, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 8.3A 8SO
MOSFET N-CH 100V 8.3A 8SO
MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2588203 | 278-IRF7853TRPBF | IRF7853TRPBFCT-ND | 001962-IRF7853TRPBF | 32AC7475 | IRF7853TRPBF | IRF7853TRPBF | IRF7853TRPBF |
| Product Name | MOSFETs | 100V 8.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7853TRPBF | Mosfet, N-Ch, 8.3A, 100V, Soic-8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
