MOSFET N-CH 30V 13.6A 8SO Product overview: IRF7821TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7821TRPBF can be used for catalog matching and distributor lookup.
N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001953-IRF7821TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 155°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1010pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 13A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 13.6A 8SO
POWER FIELD-EFFECT TRANSISTOR, 13.6A I(D), 30V, 0.0091OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 13.6A 8SO
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF7821TRPBF | IRF7821PBFCT-ND | 001953-IRF7821TRPBF | IRF7821TRPBF | 66771126 | IRF7821TRPBF | 40M7974 | IRF7821TRPBF |
| Product Name | 30V 13.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7821TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Single FETs, MOSFETs | N Channel Mosfet, 30V, 13.6A, Soic; Channel Type Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0220 kS | |||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts |
