MOSFET N-CH 30V 10.8A 8SO
SMALL SIGNAL FIELDCHANNEL, SILIC
Manufacturer: Infineon Technologies
Win Source Part Number: 001947-IRF7811AVTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF7811AV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 26nC @ 5V
Max Input Capacitance: 1801pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 15A, 4.5V
Alternative Parts (Cross-Reference): Si4134DY; Si4134DY-T1-GE3; MMSF1310R2;
Introduction Date: August 17, 2004
ECCN: EAR99
Country of Origin: China, Thailand
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 30V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET N-CH 30V 10.8A 8SO Product overview: IRF7811AVTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7811AVTRPBF can be used for catalog matching and distributor lookup.
MOSFET MOSFT 30V 14A 14mOhm 17nC
MOSFET N-CH 30V 10.8A 8SO
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7811AVTRPBF | 001947-IRF7811AVTRPBF | IRF7811AVPBFTR-ND | 278-IRF7811AVTRPBF | IRF7811AVTRPBF | IRF7811AVTRPBF | 70017450 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7811AVTRPBF | Single FETs, MOSFETs | 30V 10.8A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20 |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 10800 milliamps | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
