Infineon Technologies AG FETs - Single - IRF7811A IRF7811A

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187362-IRF7811A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 95 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 28V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 10mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 1760pF at 15V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187362-IRF7811A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 95 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 28V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 10mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 1760pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF7811A - 1187362-IRF7811A - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF7811A
1187362-IRF7811A
FETs - Single - IRF7811A 1187362-IRF7811A
Manufacturer: Infineon Technologies Win Source Part Number: 1187362-IRF7811A Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 95 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 28V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 10mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 1760pF at 15V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187362-IRF7811A
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 95
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 28V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 10mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 26nC at 4.5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 1760pF at 15V

Buy Now
Single FETs, MOSFETs - IRF7811A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7811A-ND
Single FETs, MOSFETs IRF7811A-ND
N-Channel 28V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 28V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 - 3717-IRF7811A - Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
3717-IRF7811A
Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 3717-IRF7811A
Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7811A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7811A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7811A
MOSFET N-CH 28V 11A 8SO

MOSFET N-CH 28V 11A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors
Product Number 1187362-IRF7811A IRF7811A-ND 3717-IRF7811A IRF7811A
Product Name FETs - Single - IRF7811A Single FETs, MOSFETs Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 28 volts
PD 2500 milliwatts
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