MOSFET N-CH 30V 13.3A 8SO
IRF7809 - 12V-300V N-CHANNEL POW
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001946-IRF7809AVTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 62nC @ 5V
Max Input Capacitance: 3780pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 13.3A 8SO Product overview: IRF7809AVTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7809AVTRPBF can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 30V,13.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 30V 13.3A 8SO
MOSFET MOSFT 30V 13.3A 9mOhm 41nC
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7809AVTRPBF | IRF7809AVPBFTR-ND | 001946-IRF7809AVTRPBF | 278-IRF7809AVTRPBF | 32AC7474 | IRF7809AVTRPBF | IRF7809AVTRPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7809AVTRPBF | 30V 13.3A MOSFET Transistor | Mosfet, N-Ch, 30V,13.3A, Soic; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 13300 milliamps | 13300 milliamps | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
