Manufacturer: Infineon Technologies
Win Source Part Number: 001946-IRF7809AVTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 62nC @ 5V
Max Input Capacitance: 3780pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 13.3A 8SO
IRF7809 - 12V-300V N-CHANNEL POW
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 30V 13.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET MOSFT 30V 13.3A 9mOhm 41nC
MOSFET N-CH 30V 13.3A 8SO
MOSFET, N-CH, 30V,13.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power DissipationRoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001946-IRF7809AVTRPBF | IRF7809AVTRPBF | IRF7809AVPBFTR-ND | IRF7809AVTRPBF | IRF7809AVTRPBF | 32AC7474 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7809AVTRPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V,13.3A, Soic; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
