Infineon Technologies AG Single FETs, MOSFETs IRF7807VD2PBF

Description
N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF7807VD2PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7807VD2PBF-ND
Single FETs, MOSFETs IRF7807VD2PBF-ND
N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7807VD2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7807VD2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7807VD2PBF
MOSFET N-CH 30V 8.3A 8SO

MOSFET N-CH 30V 8.3A 8SO

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IRF7807VD2PBF-ND IRF7807VD2PBF
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR - 854974-2N5550TFR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
Power Gain 25 dB
View Details
 - AUIRFR8401 - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type DPAK
Packing Method Tube; Tube
View Details
6 suppliers