MOSFET N-CH 30V 8.3A 8SO
N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001939-IRF7807TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: IRF7807
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 17nC @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 4.5V
Alternative Parts (Cross-Reference): ZXMN3B04N8TA; ZXMN3B04N8TC; UZXMN3B04N8TC; HUF76112SK8;
Introduction Date: October 10, 2000
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
MOSFET N-CH 30V 8.3A 8SO Product overview: IRF7807TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7807TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 8.3A 8SO
MOSFET MOSFT 30V 8.3A 25mOhm 12nC
MOSFET, N-CH, 30V, 8.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF7807TRPBF | IRF7807PBFTR-ND | 001939-IRF7807TRPBF | 278-IRF7807TRPBF | IRF7807TRPBF | IRF7807TRPBF | 13AC9207 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7807TRPBF | 30V 8.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 8.3A, Soic; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 8300 milliamps | 8300 milliamps | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
