Infineon Technologies AG Single FETs, MOSFETs IRF7807D1

N-Channel 30V 8.3A (Ta) 2.5W (Tc) Surface Mount 8-SO

Manufacturer: Infineon Technologies
Win Source Part Number: 1046726-IRF7807D1
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Obsolete(EOL)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 17nC @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 95

MOSFET N-CH 30V 8.3A 8SO Product overview: IRF7807D1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7807D1 can be used for catalog matching and distributor lookup.