Infineon Technologies AG Single FETs, MOSFETs IRF7805TRPBF

N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO

Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Product overview: IRF7805TRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 13A, 30V, 0.011ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 13A, 30V, 0.011ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7805TRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 001931-IRF7805TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance