Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7805PBF IRF7805PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 001930-IRF7805PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 001930-IRF7805PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7805PBF - 001930-IRF7805PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7805PBF
001930-IRF7805PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7805PBF 001930-IRF7805PBF
Manufacturer: Infineon Technologies Win Source Part Number: 001930-IRF7805PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 001930-IRF7805PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF7805PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7805PBF
Single FETs, MOSFETs IRF7805PBF
MOSFET N-CH 30V 13A 8SO

MOSFET N-CH 30V 13A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7805PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7805PBF
Single FETs, MOSFETs IRF7805PBF
MOSFET N-CH 30V 13A 8SO

MOSFET N-CH 30V 13A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7805PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7805PBF-ND
Single FETs, MOSFETs IRF7805PBF-ND
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7805PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7805PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7805PBF
MOSFET N-CH 30V 13A 8SO

MOSFET N-CH 30V 13A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 001930-IRF7805PBF IRF7805PBF IRF7805PBF-ND IRF7805PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7805PBF Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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