Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7756TRPBF IRF7756TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046715-IRF7756TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1400pF @ 10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046715-IRF7756TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1400pF @ 10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7756TRPBF - 1046715-IRF7756TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7756TRPBF
1046715-IRF7756TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7756TRPBF 1046715-IRF7756TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046715-IRF7756TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1400pF @ 10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046715-IRF7756TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1400pF @ 10V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
12V 4.3A MOSFET Transistor
289-IRF7756TRPBF
12V 4.3A MOSFET Transistor 289-IRF7756TRPBF
MOSFET 2P-CH 12V 4.3A 8TSSOP Product overview: IRF7756TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7756TRPBF can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 12V 4.3A 8TSSOP Product overview: IRF7756TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7756TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - IRF7756TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF7756TRPBFTR-ND
FET, MOSFET Arrays IRF7756TRPBFTR-ND
Mosfet Array 2 P-Channel (Dual) 12V 4.3A 1W Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 12V 4.3A 1W Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7756TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7756TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7756TRPBF
MOSFET 2P-CH 12V 4.3A 8TSSOP

MOSFET 2P-CH 12V 4.3A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1046715-IRF7756TRPBF 289-IRF7756TRPBF IRF7756TRPBFTR-ND IRF7756TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7756TRPBF 12V 4.3A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 12 volts
PD 1000 milliwatts
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