Manufacturer: Infineon Technologies
Win Source Part Number: 1046701-IRF7739L2TR1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET L8
Dimension: DirectFET Isometric L8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 46A (Ta), 375A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 330nC @ 10V
Max Input Capacitance: 11880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 mOhm @ 160A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET N-CH 40V 46A DIRECTFET Product overview: IRF7739L2TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 46A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7739L2TR1PBF can be used for catalog matching and distributor lookup.
N-Channel 40V 46A (Ta), 375A (Tc) 3.8W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
MOSFET N-CH 40V 46A DIRECTFET
MOSFET N-CH 40V 46A DIRECTFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1046701-IRF7739L2TR1PBF | 278-IRF7739L2TR1PBF | IRF7739L2TR1PBFTR-ND | IRF7739L2TR1PBF | IRF7739L2TR1PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7739L2TR1PBF | 40V 46A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | |||
| PD | 3800 to 125000 milliwatts | 3800 milliwatts | 3800 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |