Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7702TRPBF IRF7702TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046692-IRF7702TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 81nC @ 4.5V Max Input Capacitance: 3470pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046692-IRF7702TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 81nC @ 4.5V Max Input Capacitance: 3470pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7702TRPBF - 1046692-IRF7702TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7702TRPBF
1046692-IRF7702TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7702TRPBF 1046692-IRF7702TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046692-IRF7702TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 81nC @ 4.5V Max Input Capacitance: 3470pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1046692-IRF7702TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 81nC @ 4.5V
Max Input Capacitance: 3470pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - IRF7702TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7702TRPBFTR-ND
Single FETs, MOSFETs IRF7702TRPBFTR-ND
P-Channel 12V 8A (Tc) 1.5W (Tc) Surface Mount 8-TSSOP

P-Channel 12V 8A (Tc) 1.5W (Tc) Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7702TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7702TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7702TRPBF
MOSFET P-CH 12V 8A 8TSSOP

MOSFET P-CH 12V 8A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1046692-IRF7702TRPBF IRF7702TRPBFTR-ND IRF7702TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7702TRPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts
PD 1500 milliwatts
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