Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR IRF7701TR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 001915-IRF7701TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 001915-IRF7701TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR - 001915-IRF7701TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR
001915-IRF7701TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR 001915-IRF7701TR
Manufacturer: Infineon Technologies Win Source Part Number: 001915-IRF7701TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 001915-IRF7701TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 100nC @ 4.5V
Max Input Capacitance: 5050pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Singapore
12V 10A TSSOP MOSFET Transistor
285-IRF7701TR
12V 10A TSSOP MOSFET Transistor 285-IRF7701TR
MOSFET P-CH 12V 10A 8-TSSOP Product overview: IRF7701TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, TSSOP, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7701TR can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 10A 8-TSSOP Product overview: IRF7701TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, TSSOP, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7701TR can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - IRF7701TR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7701TR
Single FETs, MOSFETs IRF7701TR
MOSFET P-CH 12V 10A 8TSSOP

MOSFET P-CH 12V 10A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001915-IRF7701TR 285-IRF7701TR IRF7701TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR 12V 10A TSSOP MOSFET Transistor Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 12 volts 12 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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