Manufacturer: Infineon Technologies
Win Source Part Number: 001915-IRF7701TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 100nC @ 4.5V
Max Input Capacitance: 5050pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
MOSFET P-CH 12V 10A 8-TSSOP Product overview: IRF7701TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, TSSOP, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7701TR can be used for catalog matching and distributor lookup.
MOSFET P-CH 12V 10A 8TSSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001915-IRF7701TR | 285-IRF7701TR | IRF7701TR |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TR | 12V 10A TSSOP MOSFET Transistor | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel |
| V(BR)DSS | 12 volts | 12 volts | |
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |