Infineon Technologies AG 100V 4.1A MOSFET Transistor IRF7665S2TR1PBF

MOSFET N-CH 100V 4.1A DIRECTFET Product overview: IRF7665S2TR1PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7665S2TR1PBF can be used for catalog matching and distributor lookup.

N-Channel 100V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB

Manufacturer: Infineon Technologies
Win Source Part Number: 1187339-IRF7665S2TR1PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET SB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric SB
Power Dissipation (Maximum): 2.4W, 30W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.1A, 14.4A
Rds On (Maximum) at Id, Vgs: 62mOhm at 8.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 515pF at 25V