Infineon Technologies AG Single FETs, MOSFETs IRF7601TRPBF

Description
MOSFET N-CH 20V 5.7A MICRO8
Request a Quote Datasheet
Description
MOSFET N-CH 20V 5.7A MICRO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF7601TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7601TRPBF
Single FETs, MOSFETs IRF7601TRPBF
MOSFET N-CH 20V 5.7A MICRO8

MOSFET N-CH 20V 5.7A MICRO8

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7601TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7601TRPBFTR-ND
Single FETs, MOSFETs IRF7601TRPBFTR-ND
N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™

N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™

Buy Now Datasheet
Singapore
20V 5.7A MOSFET Transistor
278-IRF7601TRPBF
20V 5.7A MOSFET Transistor 278-IRF7601TRPBF
MOSFET N-CH 20V 5.7A MICRO8 Product overview: IRF7601TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7601TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 5.7A MICRO8 Product overview: IRF7601TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7601TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7601TRPBF - 001905-IRF7601TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7601TRPBF
001905-IRF7601TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7601TRPBF 001905-IRF7601TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 001905-IRF7601TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro8 Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.7A (Ta) Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 22nC @ 4.5V Max Input Capacitance: 650pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 35 mOhm @ 3.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 001905-IRF7601TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 22nC @ 4.5V
Max Input Capacitance: 650pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 35 mOhm @ 3.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8

MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8

Buy Now Datasheet
Transistor - 17345872 - Radwell International
Willingboro, NJ, United States
Transistor
17345872
Transistor 17345872
PRICE/EA (MIN PURCH= 4000) N CHANNEL MOSFET, 20V, 5.7A, MICRO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.7A; DRAIN SOURCE VOLTAGE. FREE 2 YEAR RADWELL WARRANTY

PRICE/EA (MIN PURCH= 4000) N CHANNEL MOSFET, 20V, 5.7A, MICRO8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:5.7A; DRAIN SOURCE VOLTAGE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7601TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7601TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7601TRPBF
MOSFET N-CH 20V 5.7A MICRO8

MOSFET N-CH 20V 5.7A MICRO8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRF7601TRPBF IRF7601TRPBFTR-ND 278-IRF7601TRPBF 001905-IRF7601TRPBF IRF7601TRPBF 17345872 IRF7601TRPBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 20V 5.7A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7601TRPBF MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 5700 milliamps
PD 1800 milliwatts 1800 milliwatts 1800 milliwatts
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