Manufacturer: Infineon Technologies
Win Source Part Number: 001899-IRF7524D1TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 8.2nC @ 4.5V
Max Input Capacitance: 240pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
MOSFET P-CH 20V 1.7A MICRO8 Product overview: IRF7524D1TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7524D1TRPBF can be used for catalog matching and distributor lookup.
P-Channel 20V 1.7A (Ta) 1.25W (Ta) Surface Mount Micro8™
MOSFET P-CH 20V 1.7A MICRO8
MOSFET P-CH 20V 1.7A MICRO8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 001899-IRF7524D1TRPBF | 278-IRF7524D1TRPBF | IRF7524D1TRPBFTR-ND | 376-IRF7524D1TRPBF | IRF7524D1TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7524D1TRPBF | 20V 1.7A MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 20V 1.7A MICRO8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | -20 volts | |||
| PD | 1250 milliwatts | 1250 milliwatts | 800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
