Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7523D1TR IRF7523D1TR

Manufacturer: Infineon Technologies
Win Source Part Number: 1046677-IRF7523D1TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 1.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 2.7A MICRO8 Product overview: IRF7523D1TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.7A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7523D1TR can be used for catalog matching and distributor lookup.