MOSFET N/P-CH 30V 2.7A/2A MICRO8 Product overview: IRF7509TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.7A, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.7A, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7509TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 30V 2.7A, 2A 1.25W Surface Mount Micro8™
Mosfet Array N and P-Channel 30V 2.7A, 2A 1.25W Surface Mount Micro8™
Mosfet Array N and P-Channel 30V 2.7A, 2A 1.25W Surface Mount Micro8™
Manufacturer: Infineon Technologies
Win Source Part Number: 001896-IRF7509TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A, 2A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 210pF @ 25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
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| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-IRF7509TRPBF | IRF7509TRPBFTR-ND | 001896-IRF7509TRPBF | IRF7509TRPBF | 41K2349 | IRF7509TRPBF | IRF7509TRPBF | IRF7509TRPBF |
| Product Name | 30V 2.7A 2A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7509TRPBF | FET, MOSFET Arrays | Dual N/p Channel Mosfet, 30V Micro8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0019 to 9.20E-4 kS | |||||||
| PD | 1.25 milliwatts | 1250 milliwatts |
