MOSFET N-CH 40V 217A DIRECTFET Product overview: IRF7480MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 217A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 217A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7480MTRPBF can be used for catalog matching and distributor lookup.
N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME
N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME
N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME
MOSFET N-CH 40V 217A DIRECTFET
Manufacturer: Infineon Technologies
Win Source Part Number: 731452-IRF7480MTRPBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DirectFET Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: DirectFET Isometric ME
Power Dissipation (Maximum): 96W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 217A
Rds On (Maximum) at Id, Vgs: 1.2mOhm at 132A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.9V at 150μA
Gate Charge (Qg) (Maximum) at Vgs: 185nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 6680pF at 25V
MOSFET, N-CH, 40V, 330A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:330A; Drain Source Voltage Vds:40V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 217A DIRECTFET
MOSFET 40V Single N-Channel HEXFET Power MOSFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF7480MTRPBF | IRF7480MTRPBFDKR-ND | IRF7480MTRPBF | 2579314 | 731452-IRF7480MTRPBF | 12AC9752 | IRF7480MTRPBF | IRF7480MTRPBF |
| Product Name | 40V 217A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | FETs - Single - IRF7480MTRPBF | Mosfet, N-Ch, 40V, 330A, Directfet Me; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| Transconductance | 0.3700 kS | |||||||
| PD | 96 milliwatts | 96000 milliwatts | 96000 milliwatts |
