Manufacturer: Infineon Technologies
Win Source Part Number: 001881-IRF7478TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 4.5V
Max Input Capacitance: 1740pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET N-CH 60V 7A 8SO Product overview: IRF7478TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7478TRPBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 60V, 7.6A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET MOSFT 60V 7.6A 26mOhm 21nC
MOSFET N-CH 60V 7A 8SO
MOSFET N-CH 60V 7A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001881-IRF7478TRPBF | IRF7478PBFTR-ND | 278-IRF7478TRPBF | 40M7964 | IRF7478TRPBF | IRF7478TRPBF | IRF7478TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7478TRPBF | Single FETs, MOSFETs | 60V 7A MOSFET Transistor | N Channel Mosfet, 60V, 7.6A, Soic; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
