Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7478QPBF IRF7478QPBF

Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065516-IRF7478QPBF Termination: SMD/SMT Length: 4.9784 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Input Capacitance: 1.74 nF Power Dissipation: 2.5 W Height: 1.4986 mm Number of Pins: 8 Width: 3.9878 mm Rise Time: 2.6 ns Fall Time: 13 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): IRF7351TRPBF; IRF7855TRPBF; DMN6040SSD-13; DMN6040SSS-13; ZXMP6A17N8TC; SI9407BDY-T1-GE3IRF7 478QPBF.; Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Max Power Dissipation: 2.5 W Turn-On Delay Time: 7.7 ns Continuous Drain Current (ID): 7 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 44 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 20 V Dual Supply Voltage: 60 V Nominal Vgs: 3 V