MOSFET N-CH 100V 6.9A 8SO
N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 001876-IRF7473TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.9A (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 3180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 6.9A 8SO Product overview: IRF7473TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7473TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 6.9A 8SO
MOSFET MOSFT 100V 6.9A 26mOhm 61nC
MOSFET, N-CH, 100V, 6.9A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes
DISCONTINUED BY MANUFACTURER, MOSFET, N-CH, 100V, 6.9A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF7473TRPBF | IRF7473PBFCT-ND | 001876-IRF7473TRPBF | 278-IRF7473TRPBF | IRF7473TRPBF | IRF7473TRPBF | 43AC3288 | 108092068 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7473TRPBF | 100V 6.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 6.9A, Soic-8; Transistor Polarity Infineon | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 6900 milliamps | 6900 milliamps | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2.5 milliwatts |
