Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7464TRPBF IRF7464TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046657-IRF7464TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 730 mOhm @ 720mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Wireless, Communications & Networking, Computers & Computer Peripherals
Quantity per package: 4k pcs

MOSFET N-CH 200V 1.2A 8SO Product overview: IRF7464TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7464TRPBF can be used for catalog matching and distributor lookup.

N-Channel 200V 1.2A (Ta) 2.5W (Ta) Surface Mount 8-SO