Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7464TR IRF7464TR

Manufacturer: Infineon Technologies
Win Source Part Number: 1046656-IRF7464TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 730 mOhm @ 720mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 200V 1.2A 8-SOIC Product overview: IRF7464TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.2A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7464TR can be used for catalog matching and distributor lookup.