Infineon Technologies AG 20V 12A MOSFET Transistor IRF7459PBF

MOSFET N-CH 20V 12A 8SO Product overview: IRF7459PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7459PBF can be used for catalog matching and distributor lookup.

N-Channel 20V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO

Win Source Part Number: 1065512-IRF7459PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HEXFET®
Package: Tube
Standard Package: 4,085
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001572154
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V