Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7452PBF IRF7452PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 121726-IRF7452PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 930pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8-SO

MOSFET N-CH 100V 4.5A 8SO Product overview: IRF7452PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7452PBF can be used for catalog matching and distributor lookup.