Infineon Technologies AG 30V 0.011 Ohm 13A MOSFET Transistor IRF7413QPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.011 Ohm; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V; Vf 1 Product overview: IRF7413QPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.011 Ohm, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.011 Ohm, 13A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF7413QPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065510-IRF7413QPBF
Termination: SMD/SMT
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Number of Elements: 1
Input Capacitance: 1.8 nF
Power Dissipation: 2.5 W
Height: 1.5 mm
Number of Pins: 8
Width: 4 mm
Rise Time: 50 ns
Fall Time: 46 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 8.6 ns
Continuous Drain Current (ID): 13 A
Turn-Off Delay Time: 52 ns
Drain to Source Resistance: 11 mΩ
Gate to Source Voltage (Vgs): 20 V
Dual Supply Voltage: 30 V
Nominal Vgs: 3 V