Manufacturer: Infineon Technologies
Win Source Part Number: 017517-IRF7380TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Rds On at Id,Vgs: 73 mOhm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 80V 3.6A 8-SOIC
MOSFET 2N-CH 80V 3.6A 8SO Product overview: IRF7380TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 3.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7380TRPBF can be used for catalog matching and distributor lookup.
HEXFET N-Ch MOSFET 3.6A 80V SOIC8
Mosfet Array 2 N-Channel (Dual) 80V 3.6A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 80V 3.6A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 80V 3.6A 2W Surface Mount 8-SO
MOSFET 2N-CH 80V 3.6A 8SO
MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:3.6A; On Resistance Rds(on):0.061ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:3.6A; On Resistance Rds(on):0.061ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017517-IRF7380TRPBF | IRF7380TRPBF | 289-IRF7380TRPBF | 8268904 | 8268904P | IRF7380TRPBFDKR-ND | IRF7380TRPBF | 31K2220 | IRF7380TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7380TRPBF | FET, MOSFET Arrays | 80V 3.6A MOSFET Transistor | MOSFETs | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||||||
| PD | 2000 milliwatts | 2 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Soic | SOIC | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
