Manufacturer: Infineon Technologies
Win Source Part Number: 1046620-IRF7379PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 4.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO
MOSFET N/P-CH 30V 8-SOIC
MOSFET N/P-CH 30V 5.8A/4.3A 8SO
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046620-IRF7379PBF | IRF7379PBF-ND | IRF7379PBF | IRF7379PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379PBF | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
