Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7379PBF IRF7379PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046620-IRF7379PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 4.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

MOSFET N/P-CH 30V 5.8A/4.3A 8SO Product overview: IRF7379PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.8A, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.8A, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7379PBF can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 8-SOIC

Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO