Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7353D1 IRF7353D1

Manufacturer: Infineon Technologies
Win Source Part Number: 017514-IRF7353D1
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5.8A, 10V
Alternative Parts (Cross-Reference): NTMSD6N303R2; IRF7353D1TRPBF; IRF7353D1; IRF7353D1TR;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO

MOSFET N-CH 30V 6.5A 8SO Product overview: IRF7353D1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7353D1 can be used for catalog matching and distributor lookup.